000			00729nam a22002057a 4500
005			20090827100615.0
008			090827t xxu||||| |||| 00| 0 eng d
080			_a621.3.032.27(035) _bLEV.1
100			_aLevinshtein, M. [ed.] _eed. by _93471
245			_aHandbook series on semiconductor parameters
300			_axiii, 218p.
653			_aSemiconductor devices
700			_aRumyanstev, S. [ed.] _93472
700			_aShur, M. [ed.] _93473
942			_cBK
260			_aSingapore _bWorld Scientific _c1996 _91362
500			_aRef. at the end of each chap.
020			_a981-02-2934-8
952			_w2009-08-27 _p00042283 _r2009-08-27 _40 _00 _bUL _10 _o621.3.032.27(035) LEV.1 _d2009-08-27 _70 _2udc _yBK _aUL
999			_c3135 _d3135