| 000 | 00927nam a2200253 a 4500 | ||
|---|---|---|---|
| 001 | adlib96000001 | ||
| 003 | ViArRB | ||
| 005 | 200902210153555.7 | ||
| 008 | 960221s1955 dcuabcdjdbkoqu001 0deng d | ||
| 020 | _a0-87942-255-6 | ||
| 022 | _a | ||
| 040 | _aAdlib | ||
| 082 | _a681.382.3:621.376 | ||
| 245 | _aModulation-Doped Field -Effect Transistors: Principles, Design and Technolgy. | ||
| 250 | _a | ||
| 260 |
_aNew York _bInstitute of Electronics and Electrical Engineers _c1991 |
||
| 300 |
_axi, 523p _c |
||
| 500 | _a Published Under the Sponsorship of the IEEE Microwave theory and Techniques Society and the IEEE Electron Devices Society. | ||
| 100 |
_aDaembkes, Heinrich _eEditor |
||
| 700 |
_a _a |
||
| 942 | _cREF | ||
| 653 | _aMODULATION-DOPED FIELD -EFFECT TRANSISTORS | ||
| 952 |
_w2010-06-16 _p00043911 _r2010-06-16 _40 _00 _bUL _10 _o681.382.3:621.376 DAE R _d2010-06-16 _70 _yREF _aUL |
||
| 999 |
_c38984 _d38983 |
||