| 000 | 00830nam a22001937a 4500 | ||
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| 005 | 20121217151358.0 | ||
| 008 | 121217t xxu||||| |||| 00| 0 eng d | ||
| 080 |
_a537.226:539.23 _bANU T |
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| 100 |
_aAnu philip _922397 |
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| 245 |
_aPreparation and characterization of high-k aluminium oxide thin films by atomic layer deposition for gate dielectric applications _cAnu Philip; guided by K. Rajeev Kumar |
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| 300 | _a202p. | ||
| 653 | _aDielectronics - high K-materials | ||
| 653 | _aAtomic layer deposition of Aluminium oxide thin films | ||
| 653 | _aMOS Capacitors | ||
| 700 |
_aRajeev Kumar, K; guided by _922396 |
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| 942 | _cTH | ||
| 260 |
_aKochi _bDepartment of Instrumentations; Cusat _c2011 _922398 |
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| 952 |
_pT0000555 _40 _00 _bUL _10 _o537.226:539.23 ANU T _d2012-12-17 _71 _cREF _2udc _yTH _aUL |
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| 999 |
_c76895 _d76894 |
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