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Modulation-Doped Field -Effect Transistors: Principles, Design and Technolgy.

By: Contributor(s):
Publication details: New York Institute of Electronics and Electrical Engineers 1991Edition: Description: xi, 523pISBN:
  • 0-87942-255-6
ISSN:
Subject(s): DDC classification:
  • 681.382.3:621.376
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Holdings
Item type Current library Call number Status Date due Barcode
Reference Reference University Library 681.382.3:621.376 DAE R (Browse shelf(Opens below)) Not for loan 00043911

Published Under the Sponsorship of the IEEE Microwave theory and Techniques Society and the IEEE Electron Devices Society.

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